Semiconductor Electronics-Materials, Devices And Simple Circuits Mock Test – Class 12 Physics
GKaim: Measure. Improve. Achieve.

Semiconductor Electronics-Materials, Devices and Simple Circuits Mock Test – Class 12 Physics

Progressive Test — Guest First Round

0%

Semiconductor Electronics-Materials, Devices and Simple Circuits – Progressive Test

Welcome to the Progressive Test.

Click Start Test to begin the loaded practice round.

Good luck!

1 / 50

1. A transistor has . The corresponding value of is closest to:

2 / 50

2. A common-emitter amplifier is biased at a proper operating point before applying the signal. The main reason is to:

3 / 50

3. The emitter of a bipolar junction transistor is usually heavily doped because its main role is to:

4 / 50

4. A semiconductor region has an electric field directed from left to right. The drift directions of electrons and holes are:

5 / 50

5. In a donor-doped semiconductor, the positive donor ions are called fixed ions because they:

6 / 50

6. A barrier potential of corresponds to an energy of for one electron because:

7 / 50

7. A practical circuit uses a bridge rectifier, capacitor filter, and Zener regulator before feeding a digital logic circuit. The most suitable purpose of this arrangement is:

8 / 50

8. A semiconductor sample has resistivity at one temperature and after heating. By what factor does its conductivity change?

9 / 50

9. The pair that contains two common elemental semiconductors is:

10 / 50

10. Study the table for transistor structure.

Row Feature Suitable description
P Number of regions Three
Q Number of junctions Two
R Base Very thick and heavily doped to maximise recombination
S Emitter Heavily doped for carrier injection

The row that is not suitable is:

11 / 50

11. Use the circuit description below.

Two gates are first used as inverters to produce and . These two inverted signals are then applied to a third gate.

The final output is:

12 / 50

12. Study the reverse-bias observations.

Row Observation Interpretation
P -side connected to negative terminal Reverse bias
Q Depletion region becomes wider Majority carriers are pulled away from junction
R Small current before breakdown Minority-carrier current
S Small current before breakdown Large majority-carrier injection

The row that is not suitable is:

13 / 50

13. A device system needs output only when both input conditions are satisfied. The suitable gate is:

14 / 50

14. For an intrinsic semiconductor, the conductivity relation may be written as:

15 / 50

15. The formation of allowed energy bands in a solid is closely connected with:

16 / 50

16. In another switching system, a warning light should turn on if either sensor or sensor detects a fault. The suitable logic gate is:

17 / 50

17. A diode terminal list mentions anode and cathode. In the usual - diode naming convention:

18 / 50

18. In the depletion region of a - junction, the charge on the -side close to the junction is mainly due to:

19 / 50

19. A full-wave bridge rectifier is supplied from a secondary with . Each conducting silicon diode drops . A capacitor charges approximately to the peak load voltage. The approximate capacitor voltage is:

20 / 50

20. A two-input logic gate has output only for and . Its Boolean expression is:

21 / 50

21. A transistor has , , and . If , the active-region estimate gives , but saturation current allowed by the load is:

22 / 50

22. A heavily doped - junction generally undergoes Zener breakdown at relatively low reverse voltage because:

23 / 50

23. In the - characteristic of a - junction diode, the usual graph is plotted with:

24 / 50

24. A pure semiconductor has thermally generated electron-hole pairs per cubic metre. The total number of mobile charge carriers per cubic metre is:

25 / 50

25. A diode in a circuit is intended to block current from a source. The anode is connected to , and the cathode is connected to . This arrangement blocks current mainly because:

26 / 50

26. A solar cell usually operates without external bias because:

27 / 50

27. A two-input gate is followed by a gate. The resulting combination behaves as:

28 / 50

28. Use the graph description below.

Three materials are represented on a qualitative scale of forbidden energy gap . Point is near , point is at a small positive value near , and point is at a much larger value.

The most suitable interpretation is:

29 / 50

29. A graph is described for a reverse-biased diode.

The horizontal axis is reverse voltage magnitude, and the vertical axis is reverse current magnitude. The curve remains almost flat at a small current for some range, then rises sharply at a much larger reverse voltage.

The nearly flat part of the graph represents:

30 / 50

30. A common-emitter amplifier has voltage gain . If the input signal is peak, the output signal is:

31 / 50

31. An emits photons of energy . Taking , the approximate wavelength is:

32 / 50

32. A full-wave rectifier is supplied by an source of frequency . The frequency of the ripple pulses in the output is:

33 / 50

33. Read the circuit situation below.

A centre-tapped transformer secondary has its centre tap connected to one end of the load. Two diodes connect the two outer ends of the secondary to the other end of the load. During one half-cycle the upper end of the secondary is positive, and during the next half-cycle the lower end is positive.

What makes the load current unidirectional?

34 / 50

34. The depletion layer in an unbiased - junction remains stable mainly because:

35 / 50

35. A Boolean circuit has . For , , and , the output is:

36 / 50

36. A diode under reverse bias suddenly carries a very large current when the reverse voltage is made high enough. The most suitable description is:

37 / 50

37. A transistor switch has , load , and negligible . If the transistor is saturated, the collector current is:

38 / 50

38. A Zener regulator has , , , and . The Zener current is:

39 / 50

39. A silicon crystal contains one impurity atom for roughly every host atoms, and its conductivity changes noticeably. This is possible because:

40 / 50

40. Study the truth table.

The logic gate represented is:

41 / 50

41. A material has , is doped with phosphorus, and then joined with a boron-doped region to form a junction. The most suitable sequence of ideas is:

42 / 50

42. The depletion region opposes further majority-carrier diffusion mainly because:

43 / 50

43. In a pure silicon crystal, each silicon atom forms covalent bonds with neighbouring silicon atoms. This bonding is important because it:

44 / 50

44. A diode symbol is used in a circuit diagram. The terminal connected to the -type side is called the:

45 / 50

45. A diode has -side at and -side at . The diode is:

46 / 50

46. In a common-emitter configuration, the output is usually taken between:

47 / 50

47. A transistor amplifier receives a sinusoidal input, but the output waveform has flattened tops. The most likely reason is:

48 / 50

48. A light-emitting diode works mainly because:

49 / 50

49. A table compares discrete-component circuits and integrated circuits.

Row Feature Discrete-component circuit Integrated circuit
P Component placement Separate components connected externally Many components on one chip
Q Size Usually larger for the same function Usually smaller for the same function
R Reliability May have more connection-related faults Often more reliable due to fewer external joints
S Basic material idea Always no semiconductor use Always no semiconductor use

The row that is not suitable is:

50 / 50

50. Consider the following statements about reverse bias.
I. The -side is connected to the negative terminal.
II. The depletion region widens.
III. The reverse current before breakdown is mainly due to majority carriers.
The valid statements are:

Your score is

Share your achievement!

LinkedIn Facebook
0%

Complete at least one Progressive Test round with incorrect or unanswered questions to unlock Mistake Review.
Complete at least 25% of the Progressive Test to unlock the Certificate Challenge Section.
Subscribe
Notify of
guest
0 Comments
Scroll to Top